MOS N-Channel VDS=100V VGS=±20V ID=45A RDS(ON)=18.5mΩ@10V TO252
VBsemi
MOS N-Channel VDS=200V VGS=±20V ID=5A RDS(ON)=850mΩ@10V TO252
VBsemi
MOS N-Channel VDS=650V VGS=±30V ID=2A RDS(ON)=5Ω@10V TO251
VBsemi
MOS N-Channel VDS=100V VGS=±20V ID=45A Pd=3.75W TO220AB
VBsemi
SOP8;2个P—Channel沟道;-30V;-6A;RDS(ON)=40mΩ@VGS=10V,VGS=±20V;Vth=-1~-3V;
VBsemi
MOS N-Channel VDS=60V VGS=±20V ID=55A RDS(ON)=10mΩ@10V TO251
VBsemi
MOS N-Channel VDS=60V VGS=±20V ID=35A RDS(ON)=32mΩ@10V TO251
VBsemi
MOS N-Channel VDS=80V VGS=±20V ID=120A RDS(ON)=6mΩ@10V TO263
VBsemi
MOS N-Channel VDS=60V VGS=±20V ID=75A RDS(ON)=11mΩ@10V TO263
VBsemi
MOS N-Channel VDS=650V VGS=±30V ID=12A RDS(ON)=650mΩ@10V TO220F
VBsemi