Lithium Battery Protection Chip DFN4-1×1 1 0.7?A

MOSFETs SOT-23-3 Single P-Channel

类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):65A;功率(Pd):45W;导通电阻(RDS(on)@Vgs,Id):6mΩ@10V,20A;阈值电压(Vgs(th)@Id):2.2V@250uA;

N and P-channel Power MOSFET SOT23-6L VGS=±12V N-channel:VDS=20V ID=3A P-channel:VDS=-20V ID=-3A

1 n-channel and 1 p-channel drain source voltage (VDSS): 30V continuous drain current (ID): 36a power (PD): 35W

P channel drain source voltage (VDSS): 20V continuous drain current (ID): 60A power (PD): 80W

P channel drain source voltage (VDSS): 30V continuous drain current (ID): 60A power (PD): 48W

N-channel drain-source voltage (Vdss) : 18V Continuous drain current (Id) : 12A Power (Pd) : 2W

Double n-channel (common drain) drain source voltage (VDSS): 20V continuous drain current (ID): 12a power (PD): 2W

N-channel drain source voltage (Vdss): 60V Continuous drain current (Id): 12A Power (Pd): 3.2W