MOSFETs PDFN5060 N-Channel VDS=30V VGS=±20V ID=150A

双N沟道,20V,6A,24mΩ@4.5V

MOSFETs PDFN3333 N-Channel VDS=30V VGS=±20V ID=50A

MOS N-Channel VDS=40V VGS=±20V ID=190A RDS(ON)=3mΩ@10V TO263

类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;

类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;

类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):90A;功率(Pd):54W;导通电阻(RDS(on)@Vgs,Id):4.5mΩ@4.5V,35A;阈值电压(Vgs(th)@Id):2.5V@250uA;

MOSFETs Dual N-Channel VDS=30V VGS=±20V ID=50A RDS(ON)=7mΩ@35A,4.5V PDFN5060

类型:P沟道;漏源电压(Vdss):40V;连续漏极电流(Id):32A;功率(Pd):52W;导通电阻(RDS(on)@Vgs,Id):25mΩ@10V,10A;阈值电压(Vgs(th)@Id):2.5V@250uA;