类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;

MOS Dual N-Channel VDS=30V VGS=±20V ID=18A RDS(ON)=18mΩ@10V SOP8_150MIL

类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):120A;功率(Pd):150W;导通电阻(RDS(on)@Vgs,Id):4mΩ@10V,60A;阈值电压(Vgs(th)@Id):3V@250uA;